Hyun Woo Kim, Dong Hun Kim, Joo Hyung You, Tae-Whan Kim. Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al::2::O::3:: and SiO::2:: Stacked Tunneling Layers. IEICE Transactions, 93-C(5):651-653, 2010. [doi]
@article{KimKYK10, title = {Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al::2::O::3:: and SiO::2:: Stacked Tunneling Layers}, author = {Hyun Woo Kim and Dong Hun Kim and Joo Hyung You and Tae-Whan Kim}, year = {2010}, url = {http://search.ieice.org/bin/summary.php?id=e93-c_5_651}, tags = {programming}, researchr = {https://researchr.org/publication/KimKYK10}, cites = {0}, citedby = {0}, journal = {IEICE Transactions}, volume = {93-C}, number = {5}, pages = {651-653}, }