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Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al::2::O::3:: and SiO::2:: Stacked Tunneling Layers

Hyun Woo Kim, Dong Hun Kim, Joo Hyung You, Tae-Whan Kim. Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al::2::O::3:: and SiO::2:: Stacked Tunneling Layers. IEICE Transactions, 93-C(5):651-653, 2010. [doi]

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