A Design of High Power SP7T and SP8T RF Switches using SOI CMOS Technology

David Kim, Kang-Yoon Lee. A Design of High Power SP7T and SP8T RF Switches using SOI CMOS Technology. In 18th International SoC Design Conference, ISOCC 2021, Jeju Island, South Korea, Republic of, October 6-9, 2021. pages 35-36, IEEE, 2021. [doi]

@inproceedings{KimL21a-6,
  title = {A Design of High Power SP7T and SP8T RF Switches using SOI CMOS Technology},
  author = {David Kim and Kang-Yoon Lee},
  year = {2021},
  doi = {10.1109/ISOCC53507.2021.9613907},
  url = {https://doi.org/10.1109/ISOCC53507.2021.9613907},
  researchr = {https://researchr.org/publication/KimL21a-6},
  cites = {0},
  citedby = {0},
  pages = {35-36},
  booktitle = {18th International SoC Design Conference, ISOCC 2021, Jeju Island, South Korea, Republic of, October 6-9, 2021},
  publisher = {IEEE},
  isbn = {978-1-6654-0174-6},
}