Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness

Dongyoung Kim, Adam J. Morgan, Nick Yun, WoongJe Sung, Anant Agarwal, Robert Kaplar. Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

@inproceedings{KimMYSAK20,
  title = {Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness},
  author = {Dongyoung Kim and Adam J. Morgan and Nick Yun and WoongJe Sung and Anant Agarwal and Robert Kaplar},
  year = {2020},
  doi = {10.1109/IRPS45951.2020.9128324},
  url = {https://doi.org/10.1109/IRPS45951.2020.9128324},
  researchr = {https://researchr.org/publication/KimMYSAK20},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-3199-3},
}