Joonhyung Kim, Jongsun Park. A Charge-domain 10T SRAM based In-Memory-Computing Macro for Low Energy and Highly Accurate DNN inference. In 18th International SoC Design Conference, ISOCC 2021, Jeju Island, South Korea, Republic of, October 6-9, 2021. pages 89-90, IEEE, 2021. [doi]
@inproceedings{KimP21a-2,
title = {A Charge-domain 10T SRAM based In-Memory-Computing Macro for Low Energy and Highly Accurate DNN inference},
author = {Joonhyung Kim and Jongsun Park},
year = {2021},
doi = {10.1109/ISOCC53507.2021.9613938},
url = {https://doi.org/10.1109/ISOCC53507.2021.9613938},
researchr = {https://researchr.org/publication/KimP21a-2},
cites = {0},
citedby = {0},
pages = {89-90},
booktitle = {18th International SoC Design Conference, ISOCC 2021, Jeju Island, South Korea, Republic of, October 6-9, 2021},
publisher = {IEEE},
isbn = {978-1-6654-0174-6},
}