Seongho Kim, Young-Keun Park, Gyu Soup Lee, Eui Joong Shin, Woon-San Ko, Hi-Deok Lee, Ga-Won Lee 0001, Byung Jin Cho. Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{KimPLSKL0C23,
title = {Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor},
author = {Seongho Kim and Young-Keun Park and Gyu Soup Lee and Eui Joong Shin and Woon-San Ko and Hi-Deok Lee and Ga-Won Lee 0001 and Byung Jin Cho},
year = {2023},
doi = {10.23919/VLSITechnologyandCir57934.2023.10185400},
url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185400},
researchr = {https://researchr.org/publication/KimPLSKL0C23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
publisher = {IEEE},
isbn = {978-4-86348-806-9},
}