Hyunggon Kim, Jung-hoon Park, Ki Tae Park, Pansuk Kwak, Ohsuk Kwon, Chulbum Kim, Younyeol Lee, Sangsoo Park, Kyungmin Kim, Doohyun Cho, Juseok Lee, Jungho Song, Soowoong Lee, Hyukjun Yoo, Sanglok Kim, Seungwoo Yu, Sungjun Kim, SungSoo Lee, Kyehyun Kyung, Yong-Ho Lim, Chilhee Chung. 2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 442-443, IEEE, 2010. [doi]
Abstract is missing.