A design procedure of predictive RF MOSFET model for compatibility with ITRS

SinNyoung Kim, Akira Tsuchiya, Hidetoshi Onodera. A design procedure of predictive RF MOSFET model for compatibility with ITRS. In Thomas Büchner, Ramalingam Sridhar, Andrew Marshall, Norbert Schuhmann, editors, Annual IEEE International SoC Conference, SoCC 2010, September 27-29, 2010, Las Vegas, NV, USA, Proceedings. pages 396-399, IEEE, 2010. [doi]

Abstract

Abstract is missing.