SangHyeon Kim, Masafumi Yokoyama, Yuki Ikku, Ryosho Nakane, Osamu Ichikawa, Takenori Osada, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi. Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 139-142, IEEE, 2013. [doi]
Abstract is missing.