Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions - researchr publication authors

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Lars Knoll, Qing-Tai Zhao, Stefan Trellenkamp, Anna Schäfer, K. K. Bourdelle, S. Mantl. Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 183-156, IEEE, 2012. [doi]

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