Lars Knoll, Qing-Tai Zhao, Stefan Trellenkamp, Anna Schäfer, K. K. Bourdelle, S. Mantl. Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 183-156, IEEE, 2012. [doi]
@inproceedings{KnollZTSBM12,
title = {Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions},
author = {Lars Knoll and Qing-Tai Zhao and Stefan Trellenkamp and Anna Schäfer and K. K. Bourdelle and S. Mantl},
year = {2012},
doi = {10.1109/ESSDERC.2012.6343356},
url = {http://dx.doi.org/10.1109/ESSDERC.2012.6343356},
researchr = {https://researchr.org/publication/KnollZTSBM12},
cites = {0},
citedby = {0},
pages = {183},
booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012},
publisher = {IEEE},
isbn = {978-1-4673-1707-8},
}