Junyoung Ko, Younghwi Yang, Jisu Kim, Cheon An Lee, Young-Sun Min, Jin-Young Chun, Moosung Kim, Seong-Ook Jung. Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory. IEEE Trans. VLSI Syst., 27(8):1828-1839, 2019. [doi]
@article{KoYKLMCKJ19,
title = {Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory},
author = {Junyoung Ko and Younghwi Yang and Jisu Kim and Cheon An Lee and Young-Sun Min and Jin-Young Chun and Moosung Kim and Seong-Ook Jung},
year = {2019},
doi = {10.1109/TVLSI.2019.2912081},
url = {https://doi.org/10.1109/TVLSI.2019.2912081},
researchr = {https://researchr.org/publication/KoYKLMCKJ19},
cites = {0},
citedby = {0},
journal = {IEEE Trans. VLSI Syst.},
volume = {27},
number = {8},
pages = {1828-1839},
}