Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao, Jose Jimenez. Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020. pages 1-4, IEEE, 2020. [doi]
@inproceedings{KobayashiKCCCJ20,
title = {Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology},
author = {Kevin W. Kobayashi and Vipan Kumar and Charles Campbell and Shuoqi Chen and Yu Cao and Jose Jimenez},
year = {2020},
doi = {10.1109/BCICTS48439.2020.9392933},
url = {https://doi.org/10.1109/BCICTS48439.2020.9392933},
researchr = {https://researchr.org/publication/KobayashiKCCCJ20},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020},
publisher = {IEEE},
isbn = {978-1-7281-9749-4},
}