Masahiro Kobayashi, Yusuke Onuki, Kazunari Kawabata, Hiroshi Sekine, Toshiki Tsuboi, Takashi Muto, Takeshi Akiyama, Yasushi Matsuno, Hidekazu Takahashi, Toru Koizumi, Katsuhito Sakurai, Hiroshi Yuzurihara, Shunsuke Inoue, Takeshi Ichikawa. A 1.8e $^{-}_{\mathrm {rms}} $ Temporal Noise Over 110-dB-Dynamic Range 3.4 $\mu \text{m}$ Pixel Pitch Global-Shutter CMOS Image Sensor With Dual-Gain Amplifiers SS-ADC, Light Guide Structure, and Multiple-Accumulation Shutter. J. Solid-State Circuits, 53(1):219-228, 2018. [doi]
@article{KobayashiOKSTMA18,
title = {A 1.8e $^{-}_{\mathrm {rms}} $ Temporal Noise Over 110-dB-Dynamic Range 3.4 $\mu \text{m}$ Pixel Pitch Global-Shutter CMOS Image Sensor With Dual-Gain Amplifiers SS-ADC, Light Guide Structure, and Multiple-Accumulation Shutter},
author = {Masahiro Kobayashi and Yusuke Onuki and Kazunari Kawabata and Hiroshi Sekine and Toshiki Tsuboi and Takashi Muto and Takeshi Akiyama and Yasushi Matsuno and Hidekazu Takahashi and Toru Koizumi and Katsuhito Sakurai and Hiroshi Yuzurihara and Shunsuke Inoue and Takeshi Ichikawa},
year = {2018},
doi = {10.1109/JSSC.2017.2737143},
url = {https://doi.org/10.1109/JSSC.2017.2737143},
researchr = {https://researchr.org/publication/KobayashiOKSTMA18},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {53},
number = {1},
pages = {219-228},
}