A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack

Yasumasa Koda, Rihito Kuroda, Taiki Nakazawa, Y. Nakao, Shigetoshi Sugawa. A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack. In Ralf Widenhorn, Antoine Dupret, editors, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, Burlingame, California, USA, February 3-7, 2013. Volume 8659 of SPIE Proceedings, SPIE, 2013. [doi]

@inproceedings{KodaKNNS13,
  title = {A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack},
  author = {Yasumasa Koda and Rihito Kuroda and Taiki Nakazawa and Y. Nakao and Shigetoshi Sugawa},
  year = {2013},
  doi = {10.1117/12.2005574},
  url = {https://doi.org/10.1117/12.2005574},
  researchr = {https://researchr.org/publication/KodaKNNS13},
  cites = {0},
  citedby = {0},
  booktitle = {Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, Burlingame, California, USA, February 3-7, 2013},
  editor = {Ralf Widenhorn and Antoine Dupret},
  volume = {8659},
  series = {SPIE Proceedings},
  publisher = {SPIE},
  isbn = {9780819494320},
}