A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation - researchr publication authors

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Pramod Kolar, Eric Karl, Uddalak Bhattacharya, Fatih Hamzaoglu, Henry Nho, Yong-Gee Ng, Yih Wang, Kevin Zhang. A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation. J. Solid-State Circuits, 46(1):76-84, 2011. [doi]

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