MouFu Kong, Ke Huang, Bin Wang, Cong Liu, Bo Yi, Hongqiang Yang. A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]
@inproceedings{KongHWLYY21,
title = {A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance},
author = {MouFu Kong and Ke Huang and Bin Wang and Cong Liu and Bo Yi and Hongqiang Yang},
year = {2021},
doi = {10.1109/ASICON52560.2021.9620483},
url = {https://doi.org/10.1109/ASICON52560.2021.9620483},
researchr = {https://researchr.org/publication/KongHWLYY21},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021},
editor = {Fan Ye and Ting-Ao Tang},
publisher = {IEEE},
isbn = {978-1-6654-3867-4},
}