A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance

MouFu Kong, Ke Huang, Bin Wang, Cong Liu, Bo Yi, Hongqiang Yang. A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

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