Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET - researchr publication authors

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Urban Kovac, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov. Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. Microelectronics Reliability, 48(8-9):1572-1575, 2008. [doi]

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