Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

Urban Kovac, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov. Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. Microelectronics Reliability, 48(8-9):1572-1575, 2008. [doi]

Abstract

Abstract is missing.