Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices

Sabina Krivec, Mirko Poljak, Tomislav Suligoj. Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices. In Petar Biljanovic, Zeljko Butkovic, Karolj Skala, Branko Mikac, Marina Cicin-Sain, Vlado Sruk, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Andrej Sokolic, editors, 38th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2015, Opatija, Croatia, May 25-29, 2015. pages 25-30, IEEE, 2015. [doi]

Abstract

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