Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures - researchr publication references

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R. Kudrawiec, M. Motyka, J. Misiewicz, B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala. Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures. Microelectronics Journal, 40(2):370-372, 2009. [doi]

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