Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology

T. Kuenzig, G. Schrag, J. Iannacci. Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology. Microelectronics Reliability, 52(9-10):2235-2239, 2012. [doi]

@article{KuenzigSI12,
  title = {Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology},
  author = {T. Kuenzig and G. Schrag and J. Iannacci},
  year = {2012},
  doi = {10.1016/j.microrel.2012.06.137},
  url = {http://dx.doi.org/10.1016/j.microrel.2012.06.137},
  researchr = {https://researchr.org/publication/KuenzigSI12},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {52},
  number = {9-10},
  pages = {2235-2239},
}