Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process

S. H. Kulkarni, Z. Chen, B. Srinivasan, B. Pedersen, U. Bhattacharya, K. Zhang. Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process. In Symposium on VLSI Circuits, VLSIC 2015, Kyoto, Japan, June 17-19, 2015. pages 174, IEEE, 2015. [doi]

Abstract

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