Sarvesh H. Kulkarni, Zhanping Chen, Balaji Srinivasan, M. Brian Pedersen, Uddalak Bhattacharya, Kevin Zhang. A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS. J. Solid-State Circuits, 51(4):1003-1008, 2016. [doi]
@article{KulkarniCSPBZ16,
title = {A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS},
author = {Sarvesh H. Kulkarni and Zhanping Chen and Balaji Srinivasan and M. Brian Pedersen and Uddalak Bhattacharya and Kevin Zhang},
year = {2016},
doi = {10.1109/JSSC.2015.2507786},
url = {http://dx.doi.org/10.1109/JSSC.2015.2507786},
researchr = {https://researchr.org/publication/KulkarniCSPBZ16},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {51},
number = {4},
pages = {1003-1008},
}