Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson s equation

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta. Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson s equation. Microelectronics Journal, 38(10-11):1013-1020, 2007. [doi]

@article{KumarACKGG07,
  title = {Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson s equation},
  author = {Sona P. Kumar and Anju Agrawal and Rishu Chaujar and Sneha Kabra and Mridula Gupta and R. S. Gupta},
  year = {2007},
  doi = {10.1016/j.mejo.2007.09.001},
  url = {http://dx.doi.org/10.1016/j.mejo.2007.09.001},
  tags = {rule-based},
  researchr = {https://researchr.org/publication/KumarACKGG07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {38},
  number = {10-11},
  pages = {1013-1020},
}