Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta. An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. Microelectronics Journal, 37(11):1339-1346, 2006. [doi]
@article{KumarAKGG06,
title = {An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications},
author = {Sona P. Kumar and Anju Agrawal and Sneha Kabra and Mridula Gupta and R. S. Gupta},
year = {2006},
doi = {10.1016/j.mejo.2006.07.003},
url = {http://dx.doi.org/10.1016/j.mejo.2006.07.003},
tags = {analysis},
researchr = {https://researchr.org/publication/KumarAKGG06},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {37},
number = {11},
pages = {1339-1346},
}