A 3nm FinFET 2.2Gsearch/s 0.305fJ/b TCAM with Dynamically Gated Search Lines for Data-Center ASICs - researchr publication authors

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Sushil Kumar, Gajanan Jedhe, Chetan Deshpande, Agastya Gouoi, Phoebe Su, Kim Soon Jway, TzeYing Seoh. A 3nm FinFET 2.2Gsearch/s 0.305fJ/b TCAM with Dynamically Gated Search Lines for Data-Center ASICs. In IEEE International Solid-State Circuits Conference, ISSCC 2025, San Francisco, CA, USA, February 16-20, 2025. pages 496-498, IEEE, 2025. [doi]

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