A 3nm FinFET 2.2Gsearch/s 0.305fJ/b TCAM with Dynamically Gated Search Lines for Data-Center ASICs

Sushil Kumar, Gajanan Jedhe, Chetan Deshpande, Agastya Gouoi, Phoebe Su, Kim Soon Jway, TzeYing Seoh. A 3nm FinFET 2.2Gsearch/s 0.305fJ/b TCAM with Dynamically Gated Search Lines for Data-Center ASICs. In IEEE International Solid-State Circuits Conference, ISSCC 2025, San Francisco, CA, USA, February 16-20, 2025. pages 496-498, IEEE, 2025. [doi]

@inproceedings{KumarJDGSJS25,
  title = {A 3nm FinFET 2.2Gsearch/s 0.305fJ/b TCAM with Dynamically Gated Search Lines for Data-Center ASICs},
  author = {Sushil Kumar and Gajanan Jedhe and Chetan Deshpande and Agastya Gouoi and Phoebe Su and Kim Soon Jway and TzeYing Seoh},
  year = {2025},
  doi = {10.1109/ISSCC49661.2025.10904633},
  url = {https://doi.org/10.1109/ISSCC49661.2025.10904633},
  researchr = {https://researchr.org/publication/KumarJDGSJS25},
  cites = {0},
  citedby = {0},
  pages = {496-498},
  booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2025, San Francisco, CA, USA, February 16-20, 2025},
  publisher = {IEEE},
  isbn = {979-8-3315-4101-9},
}