Design and analysis of noise margin, write ability and read stability of organic and hybrid 6-T SRAM cell

Brijesh Kumar, Brajesh Kumar Kaushik, Yuvraj Singh Negi. Design and analysis of noise margin, write ability and read stability of organic and hybrid 6-T SRAM cell. Microelectronics Reliability, 54(12):2801-2812, 2014. [doi]

Abstract

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