Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using Self Controllable Voltage Level Technique

T. Santosh Kumar, Suman Lata Tripathi. Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using Self Controllable Voltage Level Technique. Wireless Personal Communications, 116(3):1837-1847, 2021. [doi]

Abstract

Abstract is missing.