Elimination of bipolar induced drain breakdown and single transistor latch in submicron PD SOI MOSFET

M. Jagadesh Kumar, Vikram Verma. Elimination of bipolar induced drain breakdown and single transistor latch in submicron PD SOI MOSFET. IEEE Transactions on Reliability, 51(3):367-370, 2002. [doi]

Abstract

Abstract is missing.