Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato 0001, Toshihiro Ohki. High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron., 106(11):661-668, November 2023. [doi]
Abstract is missing.