A 130-nm CMOS 95-mm:::2::: 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput - researchr publication related

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Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Keiichi Yoshida, Yoshinori Takase, Takayuki Yoshitake, Osamu Tsuchiya, Yoshinori Ikeda, Shunichi Narumi, Michitaro Kanamitsu, Kazuto Izawa, Kazunori Furusawa. A 130-nm CMOS 95-mm:::2::: 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. IEICE Transactions, 89-C(10):1469-1479, 2006. [doi]

The following publications are possibly variants of this publication:

Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash MemoriesKazuo Otsuga, Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi. ieicet, 90-C(4):772-778, 2007. [doi]

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