The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors

Yoshihiko Kurui, Hideyuki Tomizawa, Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Tamio Ikehashi, Yoshiaki Sugizaki, Hideki Shibata. The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors. In 2017 IEEE SENSORS, Glasgow, United Kingdom, October 29 - November 1, 2017. pages 1-3, IEEE, 2017. [doi]

@inproceedings{KuruiTFSKISS17,
  title = {The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors},
  author = {Yoshihiko Kurui and Hideyuki Tomizawa and Akira Fujimoto and Tomohiro Saito and Akihiro Kojima and Tamio Ikehashi and Yoshiaki Sugizaki and Hideki Shibata},
  year = {2017},
  doi = {10.1109/ICSENS.2017.8233927},
  url = {https://doi.org/10.1109/ICSENS.2017.8233927},
  researchr = {https://researchr.org/publication/KuruiTFSKISS17},
  cites = {0},
  citedby = {0},
  pages = {1-3},
  booktitle = {2017 IEEE SENSORS, Glasgow, United Kingdom, October 29 - November 1, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-1012-7},
}