The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors

Yoshihiko Kurui, Hideyuki Tomizawa, Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Tamio Ikehashi, Yoshiaki Sugizaki, Hideki Shibata. The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors. In 2017 IEEE SENSORS, Glasgow, United Kingdom, October 29 - November 1, 2017. pages 1-3, IEEE, 2017. [doi]

Abstract

Abstract is missing.