Hyewon Kyung, Yunejae Suh, Youngho Jung, Daewoong Kang. Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash. IEEE Access, 12:45112-45117, 2024. [doi]
@article{KyungSJK24,
title = {Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash},
author = {Hyewon Kyung and Yunejae Suh and Youngho Jung and Daewoong Kang},
year = {2024},
doi = {10.1109/ACCESS.2024.3381525},
url = {https://doi.org/10.1109/ACCESS.2024.3381525},
researchr = {https://researchr.org/publication/KyungSJK24},
cites = {0},
citedby = {0},
journal = {IEEE Access},
volume = {12},
pages = {45112-45117},
}