Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

Hyewon Kyung, Yunejae Suh, Youngho Jung, Daewoong Kang. Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash. IEEE Access, 12:45112-45117, 2024. [doi]

Abstract

Abstract is missing.