Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters

Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier. Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 6, IEEE, 2015. [doi]

Abstract

Abstract is missing.