Tien-Yu Lan, Shen-Li Chen, Sheng-Kai Fan, Po-Lin Lin, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen. ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI. In IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2020, Taoyuan, Taiwan, September 28-30, 2020. pages 1-2, IEEE, 2020. [doi]
Abstract is missing.