Tien-Yu Lan, Shen-Li Chen, Po-Lin Lin, Sheng-Kai Fan, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen. ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient. In 3rd IEEE International Conference on Knowledge Innovation and Invention, ICKII 2020, Kaohsiung, Taiwan, August 21-23, 2020. pages 57-58, IEEE, 2020. [doi]
@inproceedings{LanCLFZHC20,
title = {ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient},
author = {Tien-Yu Lan and Shen-Li Chen and Po-Lin Lin and Sheng-Kai Fan and Yu-Jie Zhou and Shi-Zhe Hong and Hung-Wei Chen},
year = {2020},
doi = {10.1109/ICKII50300.2020.9318923},
url = {https://doi.org/10.1109/ICKII50300.2020.9318923},
researchr = {https://researchr.org/publication/LanCLFZHC20},
cites = {0},
citedby = {0},
pages = {57-58},
booktitle = {3rd IEEE International Conference on Knowledge Innovation and Invention, ICKII 2020, Kaohsiung, Taiwan, August 21-23, 2020},
publisher = {IEEE},
isbn = {978-1-7281-9333-5},
}