Tien-Yu Lan, Shen-Li Chen, Po-Lin Lin, Sheng-Kai Fan, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen. ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient. In 3rd IEEE International Conference on Knowledge Innovation and Invention, ICKII 2020, Kaohsiung, Taiwan, August 21-23, 2020. pages 57-58, IEEE, 2020. [doi]
Abstract is missing.