Jean-Pierre Landesman, C. Levallois, Juan Jiménez, F. Pommereau, Yoan Léger, A. Beck, Thomas Delhaye, A. Torres, C. Frigeri, A. Rhallabi. Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour. Microelectronics Reliability, 55(9-10):1750-1753, 2015. [doi]
@article{LandesmanLJPLBD15,
title = {Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour},
author = {Jean-Pierre Landesman and C. Levallois and Juan Jiménez and F. Pommereau and Yoan Léger and A. Beck and Thomas Delhaye and A. Torres and C. Frigeri and A. Rhallabi},
year = {2015},
doi = {10.1016/j.microrel.2015.07.029},
url = {http://dx.doi.org/10.1016/j.microrel.2015.07.029},
researchr = {https://researchr.org/publication/LandesmanLJPLBD15},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {55},
number = {9-10},
pages = {1750-1753},
}