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Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour

Jean-Pierre Landesman, C. Levallois, Juan Jiménez, F. Pommereau, Yoan Léger, A. Beck, Thomas Delhaye, A. Torres, C. Frigeri, A. Rhallabi. Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour. Microelectronics Reliability, 55(9-10):1750-1753, 2015. [doi]

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