M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton. UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectronics Reliability, 50(9-11):1312-1315, 2010. [doi]
@article{LanzaPNAWH10,
title = {UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements},
author = {M. Lanza and M. Porti and M. Nafría and X. Aymerich and E. Whittaker and B. Hamilton},
year = {2010},
doi = {10.1016/j.microrel.2010.07.049},
url = {http://dx.doi.org/10.1016/j.microrel.2010.07.049},
researchr = {https://researchr.org/publication/LanzaPNAWH10},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {50},
number = {9-11},
pages = {1312-1315},
}