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Evidence that N::2::O is a stronger oxidizing agent than O::2:: for both Ta::2::O::5:: and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si

W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng. Evidence that N::2::O is a stronger oxidizing agent than O::2:: for both Ta::2::O::5:: and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. Microelectronics Reliability, 47(2-3):429-433, 2007. [doi]

Authors

W. S. Lau

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P. W. Qian

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Taejoon Han

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Nathan P. Sandler

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S. T. Che

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S. E. Ang

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C. H. Tung

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T. T. Sheng

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