W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng. Evidence that N::2::O is a stronger oxidizing agent than O::2:: for both Ta::2::O::5:: and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. Microelectronics Reliability, 47(2-3):429-433, 2007. [doi]
@article{LauQHSCATS07,
title = {Evidence that N::2::O is a stronger oxidizing agent than O::2:: for both Ta::2::O::5:: and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si},
author = {W. S. Lau and P. W. Qian and Taejoon Han and Nathan P. Sandler and S. T. Che and S. E. Ang and C. H. Tung and T. T. Sheng},
year = {2007},
doi = {10.1016/j.microrel.2006.05.018},
url = {http://dx.doi.org/10.1016/j.microrel.2006.05.018},
tags = {C++},
researchr = {https://researchr.org/publication/LauQHSCATS07},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {47},
number = {2-3},
pages = {429-433},
}