Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies

O. Lazar, Jean-Guy Tartarin, Benoit Lambert, C. Moreau, J. L. Roux. Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectronics Reliability, 55(9-10):1714-1718, 2015. [doi]

Abstract

Abstract is missing.