A smooth and derivable large-signal model for microwave HEMT transistors

Marcelino Lázaro, Ignacio Santamaría, Carlos Pantaleón. A smooth and derivable large-signal model for microwave HEMT transistors. In IEEE International Symposium on Circuits and Systems, ISCAS 2000, Emerging Technologies for the 21st Century, Geneva, Switzerland, 28-31 May 2000, Proceedings. pages 713-716, IEEE, 2000. [doi]

@inproceedings{LazaroSP00,
  title = {A smooth and derivable large-signal model for microwave HEMT transistors},
  author = {Marcelino Lázaro and Ignacio Santamaría and Carlos Pantaleón},
  year = {2000},
  doi = {10.1109/ISCAS.2000.858851},
  url = {https://doi.org/10.1109/ISCAS.2000.858851},
  researchr = {https://researchr.org/publication/LazaroSP00},
  cites = {0},
  citedby = {0},
  pages = {713-716},
  booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2000, Emerging Technologies for the 21st Century, Geneva, Switzerland, 28-31 May 2000, Proceedings},
  publisher = {IEEE},
}