Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations

S. Leconte, L. Gerrer, E. Monroy. Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations. Microelectronics Journal, 40(2):339-341, 2009. [doi]

Authors

S. Leconte

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L. Gerrer

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E. Monroy

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